PART |
Description |
Maker |
FCD900N60Z |
N-Channel SuperFETII MOSFET 600 V, 4.5 A, 900 m
|
Fairchild Semiconductor
|
FCPF400N60 |
N-Channel SuperFETII MOSFET 600V, 10A, 400m
|
Fairchild Semiconductor
|
FCPF260N60E |
N-Channel SuperFETII MOSFET 600V, 15A, 260m
|
Fairchild Semiconductor
|
FCH072N60F |
N-Channel SuperFETII FRFETMOSFET 600V, 52A, 72m
|
Fairchild Semiconductor
|
MIC94030 MIC94030BM4 MIC94031BM4 4030B MIC94031 |
TinyFET P-Channel MOSFET(TinyFET???P娌??澧?己??OS?烘?搴??) TinyFETP-Channel MOSFET Preliminary Information TinyFETP沟道MOSFET的初步信 10000 SYSTEM GATE 3.3 VOLT LOGIC CELL AR - NOT RECOMMENDED for NEW DESIGN TinyFET P-Channel MOSFET(TinyFET技P沟道增强型MOS场效应管) TinyFET P-Channel MOSFET Preliminary Information TinyFET⑩ P-Channel MOSFET Preliminary Information TinyFET?/a> P-Channel MOSFET Preliminary Information
|
Micrel Semiconductor, Inc. Micrel Semiconductor,Inc. MICREL[Micrel Semiconductor]
|
FDN342P |
P-Channel 2.5V Specified PowerTrench MOSFET TRANSISTOR|MOSFET|P-CHANNEL|20VV(BR)DSS|2AI(D)|TO-236AB
P-Channel 2.5V Specified PowerTrench⑩ MOSFET
|
Fairchild Semiconductor
|
AP4525GEH |
30V N-Channel PowerTrench MOSFET 15 A, 40 V, 0.028 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, TO-252 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
Advanced Power Electronics, Corp. Advanced Power Electronics Corp.
|
IRHG6110 IRHG63110 IRHG6110P IRHG6110N IRHG6110PBF |
Simple Drive Requirements 100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package -100V 100kRad Hi-Rel Dual 2N and 2P -Channel TID Hardened MOSFET in a MO-036AB package RADIATION HARDENED POWER MOSFET 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY 1 A, 100 V, 0.7 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, MO-036AB
|
IRF[International Rectifier]
|
AM29LV010B-45RJC AM29LV010B-55JC AM29LV010B-55JE A |
A 20V Single N-Channel HEXFET Power MOSFET in a DirectFET ST Package 100V Single N-Channel HEXFET Power MOSFET in a SO-8 package 80V Single N-Channel HEXFET Power MOSFET in a SO-8 package -40V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package 20V Dual N-Bidirectional HEXFET Power MOSFET in a 6-Lead FlipFET 30V N-Channel PowerTrench MOSFET 30VN沟道的PowerTrench MOSFET -12V Single P-Channel HEXFET Power MOSFET in a TSSOP-8 package x8闪存EEPROM 1 Mb (128K x 8) Uniform Sector, Flash Memory 128K X 8 FLASH 3V PROM, 70 ns, PQCC32 x8 Flash EEPROM x8闪存EEPROM
|
Toshiba, Corp. Advanced Micro Devices, Inc. Spansion, Inc.
|
FCPF22N60NT FCP22N60N |
N-Channel MOSFET 600V, 22A, 0.165W 600V N-Channel MOSFET, SupreMOS™; 3-TO-220 22 A, 600 V, 0.165 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Fairchild Semiconductor, Corp.
|
STD2NB80 6424 STD2NB80T4 |
From old datasheet system N-CHANNEL MOSFET N - CHANNEL 800V - 4.6 ohm - 1.9A - IPAK/DPAK PowerMESH MOSFET TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 1.9A I(D) | TO-252AA 晶体管| MOSFET的| N沟道| 800V的五(巴西)直| 1.9AI(四)|52AA
|
SGS Thomson Microelectronics ST Microelectronics 意法半导 STMicroelectronics N.V.
|
STD2N50 STD2N50-1 STD2N50T4 |
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 2A I(D) | TO-252 晶体管| MOSFET的| N沟道| 500V五(巴西)直|甲(丁)|52 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR -通道增强型功率MOS器件 STD2N50-1 I-PAK MOSFET-TRANSIT N-CHANNEL MOSFET
|
STMicroelectronics N.V. 意法半导 ST Microelectronics STMICROELECTRONICS[STMicroelectronics] SGS Thomson Microelectronics
|